elektronische bauelemente 2SB1440 -2 a, -50 v pnp plastic encapsulated transistor 25-mar-2011 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ?? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low collector-emitter saturation voltage v ce(sat) ? for low-frequency output amplification ? complements to 2sd2185 package information package mpq leadersize sot-89 1k 7? inch classification of h fe1 product 2SB1440-r 2SB1440-s range 120 - 240 170 - 340 marking 1l absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current -continuous i c -2 a collector power dissipation p c 0.5 w junction & storage temperature t j , t stg 150, -55~150 c pnp electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -50 - - v i c = -10 a, i e =0 collector-emitter breakdown voltage v (br)ceo -50 - - v i c = -1ma, i b =0 emitter-base breakdown voltage v (br)ebo -5 - - v i e = -10 a, i c =0 collector cut-off current i cbo - - -1 a v cb = -50v, i e =0 emitter cut-off current i ebo - - -1 a v eb = -5 v, i c =0 h fe1 120 - 340 v ce = -2v, i c = -200ma dc current gain h fe2 60 - - v ce = -2v, i c = -1a collector-emitter sa turation voltage v ce(sat) - - -0.3 v i c = -1a, i b = -50ma base-emitter satura tion voltage v be(sat) - - -1.2 v i c = -1a, i b = -50ma transition frequency f t - 80 - mhz v ce = -10v, i c = -50ma, f=200mhz output capacitance c ob - - 60 pf v cb = -10v, i e =0, f=1mhz millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g 0.40 0.58 b 3.94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.20 sot-89 a e c d b k h f g l j 1 2 3 4 b c e
elektronische bauelemente 2SB1440 -2 a, -50 v pnp plastic encapsulated transistor 25-mar-2011 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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